Semiconductor devices

ABSTRACT

A semiconductor device includes a first transistor having a first threshold voltage, and including first channels, first source/drain layers connected to opposite sidewalls of the first channels, and a first gate structure surrounding the first channels and including a first gate insulation pattern, a first threshold voltage control pattern, and a first workfunction metal pattern sequentially stacked. The semiconductor device includes a second transistor having a second threshold voltage greater than the first threshold voltage, and including second channels, second source/drain layers connected to opposite sidewalls of the second channels, and a second gate structure surrounding the second channels and including a second gate insulation pattern, a second threshold voltage control pattern, and a second workfunction metal pattern sequentially stacked. A thickness of the second threshold voltage control pattern is equal to or less than a thickness of the first threshold voltage control pattern.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.16/040,807, filed on Jul. 20, 2018, which claims priority under 35 USC §119 to Korean Patent Application No. 10-2017-0119813, filed on Sep. 18,2017 in the Korean Intellectual Property Office (KIPO), the contents ofeach of which are herein incorporated by reference in their entirety.

BACKGROUND 1. Field

Example embodiments relate to semiconductor devices. More particularly,example embodiments relate to semiconductor devices having verticallystacked channels.

2. Description of the Related Art

As the distance between channels in a multi-bridge-channel MOSFET(MBCFET) decreases, it may be difficult to control the thickness of abarrier layer to obtain a target threshold voltage of the MBCFET. It isdesired to have a barrier layer having a relatively thicker thickness inan MBCFET having a relatively high threshold voltage, and thus, theremay not be sufficient space for forming a workfunction metal layer, anda target threshold voltage may not be obtained.

SUMMARY

Example embodiments provide a semiconductor device having goodcharacteristics to improve performance. More particularly, exampleembodiments provide a semiconductor device having good aluminumdiffusion prevention characteristics.

According to example embodiments, there is provided a semiconductordevice. The semiconductor device may include a first transistor and asecond transistor. The first transistor may have a first thresholdvoltage, and include first channels on a substrate, first source/drainlayers on the substrate, and a first gate structure surrounding thefirst channels. The first channels may be spaced apart from each otherin a vertical direction on an upper surface of the substrate. The firstsource/drain layers may be connected to respective opposite sidewalls ofthe first channels. The first gate structure may include a first gateinsulation pattern, a first threshold voltage control pattern, and afirst workfunction metal pattern sequentially stacked from a surface ofeach of the first channels. The second transistor may have a secondthreshold voltage greater than the first threshold voltage, and includesecond channels on the substrate, second source/drain layers on thesubstrate, and a second gate structure surrounding the second channels.The second channels may be spaced apart from each other in the verticaldirection on the upper surface of the substrate. The second source/drainlayers may be connected to respective opposite sidewalls of the secondchannels. The second gate structure may include a second gate insulationpattern, a second threshold voltage control pattern, and a secondworkfunction metal pattern sequentially stacked from a surface of eachof the second channels. A thickness of the second threshold voltagecontrol pattern in a direction perpendicular to the upper surface of thesubstrate may be equal to or less than a thickness of the firstthreshold voltage control pattern in the direction perpendicular to theupper surface of the substrate.

According to example embodiments, there is provided a semiconductordevice. The semiconductor device may include a first transistor, asecond transistor, and a third transistor. The first transistor may havea positive first threshold voltage, and include first channels on afirst region of a substrate including the first region and a secondregion, first source/drain layers on the first region of the substrate,and a first gate structure surrounding the first channels. The firstchannels may be spaced apart from each other in a vertical direction onan upper surface of the substrate. The first source/drain layers may beconnected to respective opposite sidewalls of the first channels. Thefirst gate structure may include a first gate insulation pattern, afirst threshold voltage control pattern, and a first workfunction metalpattern sequentially stacked from a surface of each of the firstchannels. The second transistor may have a positive second thresholdvoltage greater than the positive first threshold voltage, and includesecond channels on the first region of the substrate, secondsource/drain layers on the first region of the substrate, and a secondgate structure surrounding the second channels. The second channels maybe spaced apart from each other in the vertical direction on the uppersurface of the substrate. The second source/drain layers may beconnected to respective opposite sidewalls of the second channels. Thesecond gate structure may include a second gate insulation pattern, asecond threshold voltage control pattern, and a second workfunctionmetal pattern sequentially stacked from a surface of each of the secondchannels. The third transistor may have a negative third thresholdvoltage, and include third channels on the second region of thesubstrate, third source/drain layers on the substrate, and a third gatestructure surrounding the third channels. The third channels may bespaced apart from each other in the vertical direction on the uppersurface of the substrate. The third source/drain layers may be connectedto respective opposite sidewalls of the third channels. The third gatestructure may include a third gate insulation pattern and a thirdthreshold voltage control pattern sequentially stacked from a surface ofeach of the third channels. The first threshold voltage control patternmay have a first pattern having a first material composition, the secondthreshold voltage control pattern may have a second pattern having asecond material composition different from the first materialcomposition, and the third threshold voltage control pattern may havethe first and second patterns.

According to example embodiments, there is provided a semiconductordevice. The semiconductor device may include first channels on asubstrate, a first gate structure surrounding the first channels, secondchannels on the substrate, and a second gate structure surrounding thesecond channels. The first channels may be spaced apart from each otherin a vertical direction on an upper surface of the substrate. The firstgate structure may include a first gate insulation pattern, a firstthreshold voltage control pattern, and a first workfunction metalpattern sequentially stacked from a surface of each of the firstchannels. The second channels may be spaced apart from each other in thevertical direction on the upper surface of the substrate and may bespaced apart from the first channels in a horizontal direction parallelto the upper surface of the substrate. The second gate structure mayinclude a second gate insulation pattern, a second threshold voltagecontrol pattern, and a second workfunction metal pattern sequentiallystacked from a surface of each of the second channels. A secondworkfunction of the second gate structure may be greater than a firstworkfunction of the first gate structure, and a thickness of the secondthreshold voltage control pattern may be equal to or less than athickness of the first threshold voltage control pattern.

According to example embodiments, there is provided a semiconductordevice. The semiconductor device may include first channels on asubstrate, a first gate structure surrounding the first channels, secondchannels on the substrate, and a second gate structure surrounding thesecond channels. The first channels may be spaced apart from each otherin a vertical direction on an upper surface of the substrate. The firstgate structure may include a first gate insulation pattern, a firstthreshold voltage control pattern, and a first workfunction metalpattern sequentially stacked from a surface of each of the firstchannels. The second channels may be spaced apart from each other in thevertical direction on the upper surface of the substrate and may bespaced apart from the first channels in a horizontal direction parallelto the upper surface of the substrate. The second gate structure mayinclude a second gate insulation pattern, a second threshold voltagecontrol pattern, and a second workfunction metal pattern sequentiallystacked from a surface of each of the second channels. A secondworkfunction of the second gate structure may be greater than a firstworkfunction of the first gate structure, and a thickness in thevertical direction of a portion of the first work metal pattern betweenthe first channels may be equal to or less than a thickness in thevertical direction of a portion of the second workfunction metal patternbetween the second channels.

According to example embodiments, there is provided a semiconductordevice. The semiconductor device may include first channels on asubstrate, first source/drain layers on the substrate, and a first gatestructure surrounding the first channels. The first channels may bespaced apart from each other in a vertical direction on an upper surfaceof the substrate. The first source/drain layers may be connected torespective opposite sidewalls of the first channels. The first gatestructure may include a first gate insulation pattern, a first thresholdvoltage control pattern, and a first workfunction metal patternsequentially stacked from a surface of each of the first channels. Athickness in the vertical direction of a portion of the first work metalpattern between the first channels may be less than a thickness in ahorizontal direction parallel to the upper surface of the substrate of aportion of the first workfunction metal pattern stacked from a sidewallof the first threshold voltage control pattern.

In the semiconductor device in accordance with example embodiments, evenif the vertical distances between channels of the MBCFET decrease, theMBCFET may have a target threshold voltage.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments will be more clearly understood from the followingdetailed description taken in conjunction with the accompanyingdrawings.

FIGS. 1, 2A, 2B, 3A and 3B are a plan view and cross-sectional viewsillustrating a first semiconductor device in accordance with exampleembodiments;

FIGS. 4 to 17 are plan views and cross-sectional views illustratingstages of a method of manufacturing a semiconductor device in accordancewith example embodiments;

FIGS. 18 to 20 are cross-sectional views illustrating second to fourthsemiconductor devices, respectively, in accordance with exampleembodiments;

FIGS. 21, 22, 23A and 23B are a plan view and cross-sectional viewsillustrating a fifth semiconductor device in accordance with exampleembodiments;

FIG. 24 is a cross-sectional view illustrating a sixth semiconductordevice in accordance with example embodiments; and

FIGS. 25, 26, 27A and 27B are a plan view and cross-sectional viewsillustrating an eighth semiconductor device in accordance with exampleembodiments.

DETAILED DESCRIPTION

FIGS. 1, 2A, 2B, 3A and 3B are a plan view and cross-sectional viewsillustrating a first semiconductor device in accordance with exampleembodiments. Particularly, FIG. 1 is a plan view, FIGS. 2A and 2B arecross-sectional views taken along a line A-A′ of FIG. 1, FIG. 3A is across-sectional view taken along lines B-B′ and C-C′ of FIG. 1, and FIG.3B is an enlarged cross-sectional view of regions X and Y of FIG. 3A.

Hereinafter, two directions substantially parallel to an upper surfaceof a substrate 100 and crossing each other may be referred to as firstand second directions, respectively, and a direction substantiallyperpendicular to the upper surface of the substrate 100 may be referredto as a third direction.

Referring to FIGS. 1, 2A, 2B, 3A and 3B, the first semiconductor devicemay include first and second semiconductor patterns 126 and 128, firstand second epitaxial layers 212 and 214, and first and second gatestructures 282 and 284 on the substrate 100. The first semiconductordevice may further include first and second active fins 102 and 104, anisolation pattern 130, first and second gate spacers 182 and 184, aninner spacer 200, and an insulation layer 220.

As used herein, the first semiconductor device may be in the form of,for example, a semiconductor chip or die, formed from a semiconductorwafer. The term “semiconductor device” as used herein may also refer toa semiconductor package, including a package substrate, one or moresemiconductor chips, and an encapsulant.

The substrate 100 may include a semiconductor material, e.g., silicon,germanium, silicon-germanium, etc., or III-V semiconductor compounds,e.g., GaP, GaAs, GaSb, etc. In some embodiments, the substrate 100 maybe a silicon-on-insulator (SOI) substrate, or a germanium-on-insulator(GOI) substrate.

The substrate 100 may include first and second regions I and II. Thefirst region I may be a low voltage region to which a relatively lowvoltage may be applied, and the second region II may be a high voltageregion to which a relatively high voltage may be applied.

The first and second active fins 102 and 104 may protrude from the firstand second regions I and II of the substrate 100, respectively, in thethird direction, and each of the first and second active fins 102 and104 may extend in the first direction. In the figures, according toexemplary embodiments, one first active fin 102 and one second activefin 104 are shown on the first and second regions I and II,respectively, however, the inventive concepts are not limited thereto.Thus, a plurality of first active fins 102 may be spaced apart from eachother in the second direction on the first region I, and a plurality ofsecond active fins 104 may be spaced apart from each other in the seconddirection on the second region II.

Opposing sidewalls of the first and second active fins 102 and 104 maybe covered by the isolation pattern 130. The first and second activefins 102 and 104 may include substantially the same material as that ofthe substrate 100, and the isolation pattern 130 may include an oxide,e.g., silicon oxide.

Unless the context indicates otherwise, the terms first, second, third,etc., are used as labels to distinguish one element, component, region,layer or section from another element, component, region, layer orsection (that may or may not be similar). Thus, a first element,component, region, layer or section discussed below in one section ofthe specification (or claim) may be referred to as a second element,component, region, layer or section in another section of thespecification (or another claim).

A plurality of first semiconductor patterns 126 may be formed at aplurality of levels, respectively, to be spaced apart from each other inthe third direction from an upper surface of the first active fin 102,and a plurality of second semiconductor patterns 128 may be formed at aplurality of levels, respectively, to be spaced apart from each other inthe third direction from an upper surface of the second active fin 104.The levels at which the first and second semiconductor patterns 126 and128 are formed may be positioned at the same heights. In the figures,according to exemplary embodiments, each of the first and secondsemiconductor patterns 126 and 128 is shown at three levels, however,the inventive concepts may not be limited thereto. As illustrated in theexemplary figures, according to example embodiments, the lowermost firstsemiconductor pattern of the plurality of first semiconductor patterns126 may be positioned in the third direction (vertical direction) froman upper surface of the first active fin 102 at the same height as thecorresponding lowermost second semiconductor pattern of the plurality ofsecond semiconductor patterns 128 in the third direction (verticaldirection) from an upper surface of the second active fin 104. Asillustrated in the exemplary figures, according to example embodiments,the uppermost first semiconductor pattern of the plurality of firstsemiconductor patterns 126 may be positioned in the third direction(vertical direction) from an upper surface of the first active fin 102at the same height as the corresponding uppermost second semiconductorpattern of the plurality of second semiconductor patterns 128 in thethird direction (vertical direction) from an upper surface of the secondactive fin 104. As illustrated in the exemplary figures, according toexample embodiments, the middle first semiconductor pattern of theplurality of first semiconductor patterns 126 may be positioned in thethird direction (vertical direction) from an upper surface of the firstactive fin 102 at the same height as the corresponding middle secondsemiconductor pattern of the plurality of second semiconductor patterns128 in the third direction (vertical direction) from an upper surface ofthe second active fin 104.

In the figures, according to exemplary embodiments, only one firstsemiconductor pattern 126 is shown at each level on the first active fin102 and only one second semiconductor pattern 128 is shown at each levelon the second active fin 104, however, the inventive concepts may not belimited thereto. Thus, a plurality of first semiconductor patterns 126may be formed to be spaced apart from each other in the first directionat each level on the first active fin 102, and a plurality of secondsemiconductor patterns 128 may be formed to be spaced apart from eachother in the first direction at each level on the second active fin 104.

In example embodiments, the first and second semiconductor patterns 126and 128 may be nanosheets including a semiconductor material, e.g.,silicon, germanium, etc.

Alternatively, the first and second semiconductor patterns 126 and 128may be nanowires including a semiconductor material.

In example embodiments, the first and second semiconductor patterns 126and 128 may serve as channels of first and second transistors,respectively, which may be referred to as first and second channels,respectively.

The first epitaxial layer 212 may extend in the third direction from theupper surface of the first active fin 102, and may commonly contactrespective sidewalls of the first semiconductor patterns 126 at theplurality of levels to be connected thereto. An upper portion of thefirst epitaxial layer 212 may contact a lower sidewall of the first gatespacer 182. The second epitaxial layer 214 may extend in the thirddirection from the upper surface of the second active fin 104, and maycommonly contact respective sidewalls of the second semiconductorpatterns 128 at the plurality of levels to be connected thereto. Anupper portion of the second epitaxial layer 214 may contact a lowersidewall of the second gate spacer 184.

In example embodiments, each of the first and second epitaxial layers212 and 214 may include single crystalline silicon carbide doped withn-type impurities or single crystalline silicon doped with n-typeimpurities, and thus may serve as a source/drain layer of an NMOStransistor. Alternatively, each of the first and second epitaxial layers212 and 214 may include single crystalline silicon-germanium doped withp-type impurities, and thus may serve as a source/drain layer of a PMOStransistor. The first and second epitaxial layers 212 and 214 may serveas first and second source/drain layers, respectively.

The first and second gate structures 282 and 284 may be formed on thefirst and second regions I and II, respectively, of the substrate 100,and may surround the first and second semiconductor patterns 126 and128, respectively. In the figures, according to exemplary embodiments,the first gate structure 282 is shown to cover the first semiconductorpattern 126 on one first active fin 102, and the second gate structure284 is shown to cover the second semiconductor pattern 128 on one secondactive fin 104, however, the inventive concepts may not be limitedthereto. For example, each of the first and second gate structures 282and 284 may extend in the second direction, and the first gate structure282 may cover the first semiconductor patterns 126 on a plurality offirst active fins 102, and the second gate structure 284 may cover thesecond semiconductor patterns 128 on a plurality of second active fins104.

In the figure, according to exemplary embodiments, one first gatestructure 282 is shown on the first region I of the substrate 100, andone second gate structure 284 is shown on the second region II of thesubstrate 100, however, the inventive concepts may not be limitedthereto. Thus, a plurality of first gate structures 282 may be formed onthe first region I of the substrate 100, and a plurality of second gatestructures 284 may be formed on the second region II of the substrate100.

The first and second gate spacers 182 and 184 may cover upper sidewallsin the first direction and sidewalls in the second direction of thefirst and second gate structures 282 and 284, respectively, and theinner spacer 200 may be formed between lower sidewalls in the firstdirection of the first and second gate structures 282 and 284,respectively, and the first and second epitaxial layers 212 and 214,respectively.

The first and second gate spacers 182 and 184 may include a nitride,e.g., silicon nitride, the inner spacer 200 may include an oxide, e.g.,silicon oxide. In an example embodiment, a thickness of the inner spacer200 in the first direction may be equal to that of each of the first andsecond gate spacers 182 and 184 in the first direction.

The first gate structure 282 may include a first gate insulationpattern, a first threshold voltage control pattern 262, and a firstworkfunction metal pattern 272 sequentially stacked from a surface ofeach of the first semiconductor patterns 126, and the first gateinsulation pattern may include a first interface pattern 242 and a firsthigh-k dielectric pattern 252 sequentially stacked.

The first interface pattern 242 may be formed on the upper surface ofthe first active fin 102 and the surfaces of the first semiconductorpatterns 126, and the first high-k dielectric pattern 252 may be formedon a surface of the first interface pattern 242, an inner sidewall ofthe inner spacer 200, and an inner sidewall of the first gate spacer182. The first threshold voltage control pattern 262 may be formed onthe first high-k dielectric pattern 252, and the first workfunctionmetal pattern 272 may fill a space between the first semiconductorpatterns 126 spaced apart from each other in the third direction and aspace defined by an inside of the first gate spacer 182 on an uppermostone of the first semiconductor patterns 126.

The first interface pattern 242 may include an oxide, e.g., siliconoxide, and the first high-k dielectric pattern 252 may include, e.g.,hafnium oxide, tantalum oxide, zirconium oxide, etc.

The first threshold voltage control pattern 262 may include, e.g.,titanium nitride, titanium oxynitride, titanium oxycarbonitride,titanium silicon nitride, titanium silicon oxynitride, titanium aluminumoxynitride, tantalum nitride, tantalum oxynitride, tantalum aluminumnitride, tantalum aluminum oxynitride, tungsten nitride, tungstencarbonitrde, aluminum oxide, etc. The first workfunction metal pattern272 may include, e.g., titanium aluminum, titanium aluminum oxide,titanium aluminum carbide, titanium aluminum nitride, titanium aluminumoxynitride, titanium aluminum carbonitrde, titanium aluminumoxycarbonitride, etc.

The first gate structure 282 together with the first epitaxial layer 212serving as a source/drain layer and the first semiconductor pattern 126serving as a channel may form a first transistor. The first transistormay be an NMOS transistor or a PMOS transistor according to theconductivity type of the impurities doped in the first epitaxial layer212. The first transistor may include the plurality of firstsemiconductor patterns 126 sequentially stacked in the third direction,and thus may be an MBCFET.

The first transistor may have a first threshold voltage, which may beobtained by the first workfunction metal pattern 272 and the firstthreshold voltage control pattern 262. For example, when the firstworkfunction metal pattern 272 includes titanium aluminum carbide andthe first threshold voltage control pattern 262 includes titaniumnitride, the first threshold voltage control pattern 262 may prevent orreduce the diffusion of aluminum in the first workfunction metal pattern272, and the degree of diffusion of aluminum may be controlled by thethickness of the first threshold voltage control pattern 262 so that thefirst threshold voltage may be obtained.

The second gate structure 284 may include a second gate insulationpattern, a second threshold voltage control pattern 264, and a secondworkfunction metal pattern 274 sequentially stacked from a surface ofeach of the second semiconductor patterns 128, and the second gateinsulation pattern may include a second interface pattern 244 and asecond high-k dielectric pattern 254 sequentially stacked.

The second interface pattern 244, the second high-k dielectric pattern254, and the second workfunction metal pattern 274 may includesubstantially the same material compositions as those of the firstinterface pattern 242, the first high-k dielectric pattern 252, and thefirst workfunction control pattern 264, respectively. The secondthreshold voltage control pattern 264 may include the above-mentionedmaterials of the first threshold voltage control pattern 262.

Terms such as “same,” “equal,” “planar,” or “coplanar,” as used hereinwhen referring to orientation, layout, location, shapes, sizes, amounts,or other measures do not necessarily mean an exactly identicalorientation, layout, location, shape, size, amount, or other measure,but are intended to encompass nearly identical orientation, layout,location, shapes, sizes, amounts, or other measures within acceptablevariations that may occur, for example, due to manufacturing processes.The term “substantially” may be used herein to emphasize this meaning,unless the context or other statements indicate otherwise. For example,items described as “substantially the same,” “substantially equal,” or“substantially planar,” may be exactly the same, equal, or planar, ormay be the same, equal, or planar within acceptable variations that mayoccur, for example, due to manufacturing processes.

The second gate structure 284 together with the second epitaxial layer214 serving as a source/drain layer and the second semiconductor pattern128 serving as a channel may form a second transistor. The secondtransistor may be an NMOS transistor or a PMOS transistor according tothe conductivity type of the impurities doped in the second epitaxiallayer 214. The second transistor may include the plurality of secondsemiconductor patterns 128 sequentially stacked in the third direction,and thus may be an MBCFET.

The second transistor may have a second threshold voltage, which may beobtained by the second workfunction metal pattern 274 and the secondthreshold voltage control pattern 264.

In example embodiments, each of the first and second channels may be ananosheet, and each of a distance between the first channels and adistance between the second channels is equal to or less than about 10nm.

In example embodiments, each of the first and second transistors may bean NMOS transistor. The second threshold voltage of the secondtransistor may be higher than the first threshold voltage of the firsttransistor. A second workfunction of the second gate structure 284including the second workfunction metal pattern 274 and the secondthreshold voltage control pattern 264 may be higher than that of thefirst gate structure 282 including the first workfunction metal pattern272 and the first threshold voltage control pattern 262. Thus, when thefirst and second workfunction metal patterns 272 and 274 include thesame material compositions and the first and second threshold voltagecontrol patterns 262 and 264 include the same material compositions,generally, a thickness of the second threshold voltage control pattern264 is more than that of the first threshold voltage control pattern262.

As illustrated in FIG. 3B, in example embodiments, the first and secondthreshold voltage control patterns 262 and 264 may include differentmaterial compositions, and a fifth thickness T5 of the second thresholdvoltage control pattern 264 may be equal to or less than a fourththickness T4 of the first threshold voltage control pattern 262. Asillustrated in FIG. 3B, the fourth thickness T4 of the first thresholdvoltage control pattern 262 may be uniform in a direction perpendicularto an upper surface of the substrate 100 and in a direction parallel tothe upper surface of the substrate 100. Likewise, the fifth thickness T5of the second threshold voltage control pattern 264 may be uniform in adirection perpendicular to an upper surface of the substrate 100 and ina direction parallel to the upper surface of the substrate 100. In anexample embodiment, the first and second threshold voltage controlpatterns 262 and 264 may include titanium nitride and titanium siliconnitride, respectively, and the characteristics of the second thresholdvoltage control pattern 264 including titanium silicon nitride forpreventing the diffusion of aluminum may be greater than those of thefirs threshold voltage control pattern 262 including titanium nitridefor preventing the diffusion of aluminum. Accordingly, even if thesecond threshold voltage control pattern 264 of the second transistorhas a relatively thinner thickness compared to that of the firstthreshold voltage control pattern 262, the relatively high thresholdvoltage may be obtained by the second threshold voltage control pattern264.

In example embodiments, a distance between neighboring ones of the firstsemiconductor patterns 126 sequentially stacked in the third directionor a distance between neighboring ones of the second semiconductorpatterns 128 sequentially stacked in the third direction may be lessthan about 10 nm. As the distance between channels sequentially stackedin the third direction decreases, the threshold voltage control patternand the workfunction metal pattern may not have sufficiently thickthicknesses between the channels. For example, in order to obtain thesecond threshold voltage having a relatively high value, conventionally,the second threshold voltage control pattern 264 may need a relativelythicker thickness, and thus there may not be sufficient spaces forforming the second workfunction metal pattern 274.

However, in example embodiments, the second threshold voltage controlpattern 264 may include a material having relatively high diffusionprevention characteristics when compared to those of the first thresholdvoltage control pattern 262, and thus a relatively high thresholdvoltage may be obtained even with a relatively thinner thicknesscompared to that of the first threshold voltage control pattern 262, andthe second workfunction metal pattern 274 may have a sufficientlythicker thickness compared to that of the first workfunction metalpattern 272.

In FIG. 2A, a third thickness T3 in a vertical direction of a portion ofthe second workfunction metal pattern 274 between the secondsemiconductor patterns 128 in the second transistor is greater than asecond thickness T2 in the vertical direction of a portion of the firstworkfunction metal pattern 272 between the first semiconductor patterns126 in the first transistor.

As the distance between the channels decreases, the second thickness T2in the vertical direction of the portion of the first workfunction metalpattern 272 between the first semiconductor patterns 126 in the firsttransistor is less than twice the first thickness T1 in a horizontaldirection of a portion of the first workfunction metal pattern 272stacked in the second direction from the sidewall of the first thresholdvoltage control pattern 262 in FIG. 2A. FIG. 2B shows the secondthickness T2 in the vertical direction of the portion of the firstworkfunction metal pattern 272 between the first semiconductor patterns126 in the first transistor is less than the first thickness T1 in thehorizontal direction of the portion of the first workfunction metalpattern 272 stacked in the second direction from the sidewall of thefirst threshold voltage control pattern 262.

The third thickness T3 in the vertical direction of the portion of thesecond workfunction metal pattern 274 between the second semiconductorpatterns 128 in the second transistor is equal to or more than twice thefirst thickness T1 in the horizontal direction of a portion of thesecond workfunction metal pattern 274 stacked in the second directionfrom the sidewall of the second threshold voltage control pattern 264 inFIG. 2A.

The insulation layer 220 may surround the sidewalls of the first andsecond gate spacers 182 and 184 and cover the first and second epitaxiallayers 212 and 214. The insulation layer 220 may include an oxide, e.g.,silicon oxide.

The first semiconductor device may further include contact plugs (notshown), wirings (not shown) or wiring patterns, etc., electricallyconnected to the first and second epitaxial layers 212 and 214. Contactplugs may be, for example, conductive plugs formed of a conductivematerial such as a metal. The wiring patterns described above may alsobe formed of a conductive material, for example, a metal, and each maybe formed horizontally within the die.

FIGS. 4 to 17 are plan views and cross-sectional views illustratingstages of a method of manufacturing a semiconductor device in accordancewith example embodiments. Particularly, FIGS. 4, 6, 8, 11, 14, and 16are plan views, and FIGS. 5, 7, 9-10, 12-13, 15, and 17 arecross-sectional views.

FIGS. 5, 7, and 9 are cross-sectional views taken along lines A-A′ ofcorresponding plan views, respectively, FIGS. 10, 12, 13, 15, and 17 arecross-sectional views taken along lines B-B′ of corresponding planviews, respectively.

Referring to FIGS. 4 and 5, a sacrificial layer 110 and a semiconductorlayer 120 may be alternately stacked on a substrate 100 including firstand second regions I and II.

In the figures, according to exemplary embodiments, three sacrificiallayers 110 and three semiconductor layers 120 are shown to be formed onthe substrate 100, however, the inventive concepts may not be limitedthereto.

The sacrificial layer 110 may include a material having an etchingselectivity with respect to the substrate 100 and the semiconductorlayer 120, which may include, e.g., silicon-germanium.

Referring to FIGS. 6 and 7, a photoresist pattern may be formed on anuppermost one of the semiconductor layers 120 to extend in the firstdirection, and the semiconductor layers 120, the sacrificial layers 110,and an upper portion of the substrate 100 may be etched using thephotoresist pattern as an etching mask.

Thus, a first active fin 102, a first sacrificial line 112, and a firstsemiconductor line 122 each of which may extend in the first directionmay be formed on the first region I of the substrate 100, and a secondactive fin 104, a second sacrificial line 114, and a secondsemiconductor line 124 each of which may extend in the first directionmay be formed on the second region II of the substrate 100.

After removing the photoresist pattern, an isolation pattern 130 may beformed on the first and second regions I and II of the substrate 100 tocover sidewalls of the first and second active fins 102 and 104.

Hereinafter, the first sacrificial lines 112 and the first semiconductorlines 122, each of which may extend in the first direction, sequentiallystacked on an upper surface of the first active fin 102 may be referredto as a first structure, and the second sacrificial lines 114 and thesecond semiconductor lines 124, each of which may extend in the firstdirection, sequentially stacked on an upper surface of the second activefin 104 may be referred to as a second structure.

In example embodiments, a plurality of first structures may be formed tobe spaced apart from each other in the second direction on the firstregion I of the substrate 100, and a plurality of second structures maybe formed to be spaced apart from each other in the second direction onthe second region II of the substrate 100.

Referring to FIGS. 8 to 10, a first dummy gate structure 172 may beformed on the first region I of the substrate 100 to partially cover thefirst structure and the isolation pattern 130, and a second dummy gatestructure 174 may be formed on the second region II of the substrate 100to partially cover the second structure and the isolation pattern 130.

Particularly, a dummy gate insulation layer, a dummy gate electrodelayer, and a dummy gate mask layer may be sequentially formed on thesubstrate 100 having the first and second structures and the isolationpattern 130 thereon, a photoresist pattern may be formed on the dummygate mask layer, and the dummy gate mask layer may be etched using thephotoresist pattern as an etching mask to form first and second dummygate masks 162 and 164 on the first and second regions I and II,respectively, of the substrate 100. The dummy gate insulation layer mayinclude an oxide, e.g., silicon oxide, the dummy gate electrode layermay include, e.g., polysilicon, and the dummy gate mask layer mayinclude a nitride, e.g., silicon nitride.

The dummy gate electrode layer and the dummy gate insulation layer maybe etched using the first and second dummy gate masks 162 and 164 as anetching mask to form a first dummy gate electrode 152 and a first dummygate insulation pattern 142, respectively, on the first region I of thesubstrate 100 and to form a second dummy gate electrode 154 and a seconddummy gate insulation pattern 144, respectively, on the second region IIof the substrate 100.

The first dummy gate insulation pattern 142, the first dummy gateelectrode 152, and the first dummy gate mask 162 sequentially stacked onthe first active fin 102 and a portion of the isolation pattern 130adjacent thereto may form the first dummy gate structure 172, and thesecond dummy gate insulation pattern 144, the second dummy gateelectrode 154, and the second dummy gate mask 164 sequentially stackedon the second active fin 104 and a portion of the isolation pattern 130adjacent thereto may form the second dummy gate structure 174.

In example embodiments, the first and second dummy gate structures 172and 174 may extend in the second direction to cover sidewalls in thesecond direction of the first and second structures, respectively.

First and second gate spacers 182 and 184 may be formed on sidewalls ofthe first and second dummy gate structures 172 and 174, respectively.

Particularly, a gate spacer layer may be formed on the substrate 100having the first and second structures, the isolation pattern 130, andthe first and second dummy gate structures 172 and 174 thereon, and maybe anisotropically etched to form the first and second gate spacers 182and 184, respectively.

Referring to FIGS. 11 and 12, the first and second structures may beetched using the first and second dummy gate structures 172 and 174, andthe first and second gate spacers 182 and 184 as an etching mask to formthird and fourth structures, respectively.

The third structure may include first sacrificial patterns 116 and firstsemiconductor patterns 126 alternately stacked on the upper surface ofthe first active fin 102 on the first region I of the substrate 100, anda plurality of third structures may be formed to be spaced apart fromeach other in each of the first and second directions. Likewise, thefourth structure may include second sacrificial patterns (not shown) andsecond semiconductor patterns 128 (refer to FIGS. 2A and 3A) alternatelystacked on the upper surface of the second active fin 104 on the secondregion II of the substrate 100, and a plurality of fourth structures maybe formed to be spaced apart from each other in each of the first andsecond directions.

Hereinafter, the first dummy gate structure 172, the first gate spacer182 on the sidewall of the first dummy gate structure 172, and the thirdstructure may be referred to as a fifth structure, and the second dummygate structure 174, the second gate spacer 184 on the sidewall of thesecond dummy gate structure 174, and the fourth structure may bereferred to as a sixth structure. In example embodiments, a plurality offifth structures may be formed to be spaced apart from each other ineach of the first and second directions, and a plurality of sixthstructures may be formed to be spaced apart from each other in each ofthe first and second directions. A first opening 190 may be formedbetween neighboring ones of the fifth and sixth structures.

Referring to FIG. 13, opposite sidewalls in the first direction of thefirst sacrificial patterns 116 and the second sacrificial patternsexposed by the first opening 190 may be etched to form recesses, and aninner spacer 200 may be formed to fill each of the recesses.

In example embodiments, the recesses may be formed by a wet etchingprocess on the first sacrificial patterns 116 and the second sacrificialpatterns. The inner spacer 200 may be formed by a deposition process,e.g., a chemical vapor deposition (CVD) process, an atomic layerdeposition (ALD) process, etc.

In an example embodiment, the inner spacer 200 may have a thickness inthe first direction substantially equal to a thickness in the firstdirection of each of the first and second gate spacers 182 and 184.

Referring to FIGS. 14 and 15, first and second epitaxial layers 212 and214 may be formed on upper surfaces of the first and second active fins102 and 104, respectively, of the substrate 100 exposed by the firstopening 190.

In example embodiments, the first and second epitaxial layers 212 and214 may be formed by a selective epitaxial growth (SEG) process usingthe exposed upper surfaces of the first and second active fins 102 and104 by the first opening 190 as a seed.

In example embodiments, the SEG process may be performed using a siliconsource gas such as disilane (Si₂H₆) and a carbon source gas such asSiH₃CH₃, to form a single crystalline silicon carbide (SiC) layer. In anexample embodiment, the SEG process may be performed using only thesilicon source gas such as disilane (Si₂H₆), to form a singlecrystalline silicon layer.

Alternatively, the SEG process may be performed, using a silicon sourcegas such as dichlorosilane (SiH₂Cl₂) and a germanium source gas such asgermane (GeH₄), to form a single crystalline silicon germanium (SiGe)layer.

In example embodiments, the first and second epitaxial layers 212 and214 may be formed on sidewalls in the first direction of the fifth andsixth structures, respectively. In example embodiments, the first andsecond epitaxial layers 212 and 214 may contact sidewalls of the thirdand fourth structures, respectively, and further grow to contactsidewalls of the first and second gate spacers 182 and 184,respectively, on the third and fourth structures, respectively.

In some embodiments, the first and second epitaxial layers 212 and 214may be formed by a laser epitaxial growth (LEG) process or a solid phaseepitaxy (SPE) process.

The first and second epitaxial layers 212 and 214 may serve assource/drain layers of the first and second transistors, respectively.An impurity doping process and a heat treatment process may be furtherperformed on the first and second epitaxial layers 212 and 214. Forexample, when the first and second epitaxial layers 212 and 214 includesilicon carbide or silicon, n-type impurities may be doped thereinto anda heat treatment may be performed to form a source/drain layer of anNMOS transistor. When the first and second epitaxial layers 212 and 214include silicon-germanium, p-type impurities may be doped thereinto anda heat treatment may be performed to form a source/drain layer of a PMOStransistor.

Referring to FIGS. 16 and 17, an insulation layer 220 may be formed onthe substrate 100 to cover the fifth and sixth structures and the firstand second epitaxial layers 212 and 214, and may be planarized untilupper surfaces of the first and second dummy gate electrodes 152 and 154of the fifth and sixth structures, respectively, may be exposed. Duringthe planarization process, the first and second dummy gate masks 162 and164 may be also removed, and upper portions of the first and second gatespacers 182 and 184 may be removed.

The planarization process may be performed by a chemical mechanicalpolishing (CMP) process and/or an etch back process.

The exposed first and second dummy gate electrodes 152 and 154 and thefirst and second dummy gate insulation patterns 142 and 144 may beremoved to form a second opening 232 exposing an inner sidewall of thefirst gate spacer 182, an inner sidewall of the inner spacer 200,surfaces of the first semiconductor patterns 126, and the upper surfaceof the first active fin 102, and to form a third opening 234 exposing aninner sidewall of the second gate spacer 184, the inner sidewall of theinner spacer 200, surfaces of the second semiconductor patterns 128, andthe upper surface of the second active fin 104.

Referring to FIGS. 1 to 3 again, first and second gate structures 282and 284 may be formed on the first and second regions I and II,respectively, of the substrate 100 to fill the second and third openings232 and 234, respectively.

Particularly, a thermal oxidation process may be performed on the uppersurfaces of the first and second active fins 102 and 104 and thesurfaces of the first and second semiconductor patterns 126 and 128exposed by the second and third openings 232 and 234, respectively, toform first and second interface patterns 242 and 244, respectively, anda high-k dielectric layer and a first threshold voltage control layermay be sequentially formed on surfaces of the first and second interfacepatterns 242 and 244, the inner sidewall of the inner spacer 200, theinner sidewalls of the first and second gate spacers 182 and 184, and anupper surface of the insulation layer 220.

A first mask may be formed to cover the first region I of the substrate100, and a portion of the first threshold voltage control layer on thesecond region II of the substrate 100 may be etched using the first maskas an etching mask to expose a portion of the high-k dielectric layer onthe second region II of the substrate 100. Thus, the first thresholdvoltage control layer may remain on the first region I of the substrate100.

A second threshold voltage control layer may be formed on the firstthreshold voltage control layer remaining on the first region I of thesubstrate 100 and the exposed portion of the high-k dielectric layer onthe second region II of the substrate 100. A second mask may be formedto cover the second region II of the substrate 100, and a portion of thesecond threshold voltage control layer on the first region I of thesubstrate 100 may be etched using the second mask as an etching mask toexpose the first threshold voltage control layer on the first region Iof the substrate 100. Thus, the second threshold voltage control layermay remain on the second region II of the substrate 100.

A workfunction metal layer may be formed on the first and secondthreshold voltage control layers to fill the second and third openings232 and 234.

The high-k dielectric layer, the first and second threshold voltagecontrol layers, and the workfunction metal layer may be formed by, e.g.,a CVD process, an ALD process, a physical vapor deposition (PVD)process, etc. The first and second interface patterns 242 and 244 may bealso formed by a CVD process, an ALD process, etc., instead of thethermal oxidation process. In this case, the first and second interfacepatterns 242 and 244 may be also formed on the inner sidewall of theinner spacer 200 and the inner sidewalls of the first and second gatespacers 182 and 184.

In example embodiments, the first and second threshold voltage controllayers may include different material compositions. The second thresholdvoltage control layer may have a thickness equal to or less than that ofthe first threshold voltage control layer.

The workfunction metal layer, the first and second threshold voltagecontrol layers, and the high-k dielectric layer may be planarized untilthe upper surface of the insulation layer 20 may be exposed to formfirst and second workfunction metal patterns 272 and 274, first andsecond threshold voltage control patterns 262 and 264, and first andsecond high-k dielectric patterns 252 and 254, respectively.

The first interface pattern 242, the first high-k dielectric pattern252, the first threshold voltage control pattern 262, and the firstworkfunction metal pattern 272 may form the first gate structure 282,and the second interface pattern 244, the second high-k dielectricpattern 254, the second threshold voltage control pattern 264, and thesecond workfunction metal pattern 274 may form the second gate structure284.

FIGS. 18 to 20 are cross-sectional views illustrating second to fourthsemiconductor devices, respectively, in accordance with exampleembodiments. Each of FIGS. 18 to 20 is an enlarged cross-sectional viewof regions X and Y of FIG. 3A. The second to fourth semiconductordevices may be substantially the same as or similar to the firstsemiconductor device. Thus, like reference numerals refer to likeelements, and detailed descriptions thereon are omitted herein.

Referring to FIG. 18, the second gate structure 284 may include athreshold voltage control pattern structure 304 having third and secondthreshold voltage control patterns 294 and 264 sequentially stacked suchthat the third threshold voltage control pattern 294 is conformallyprovided between the second high-k dielectric pattern 254 and the secondthreshold voltage control pattern 264.

In example embodiments, the third threshold voltage control pattern 294may include the substantially the same material composition as that ofthe first threshold voltage control pattern 262, e.g., titanium nitride,and thus may have a double-layered structure including a titaniumnitride layer and a titanium silicon nitride layer sequentially stacked.

In example embodiments, a sixth thickness T6 of the threshold voltagecontrol pattern structure 304 may be equal to or less than the fourththickness T4 of the first threshold voltage control pattern 262.However, the second threshold voltage control pattern 264 of thethreshold voltage control pattern structure 304 may have improveddiffusion prevention characteristics for a workfunction metal, and thusthe second threshold voltage higher than the first threshold voltage maybe obtained. As illustrated in FIGS. 18, 19, and 20, the fourththickness T4 of the first threshold voltage control pattern 262 may beuniform in a direction perpendicular to an upper surface of thesubstrate 100 and in a direction parallel to the upper surface of thesubstrate 100; the fifth thickness T5 of the second threshold voltagecontrol pattern 264 may be uniform in a direction perpendicular to anupper surface of the substrate 100 and in a direction parallel to theupper surface of the substrate 100; and the sixth thickness T6 of thethreshold voltage control pattern structure 304 may be uniform in adirection perpendicular to an upper surface of the substrate 100 and ina direction parallel to the upper surface of the substrate 100.

In some embodiments, although not illustrated in the figures, thethreshold voltage control pattern structure 304 may include second andthird threshold voltage control patterns 264 and 294 sequentiallystacked such that the second threshold voltage control pattern 264 isconformally provided between the second high-k dielectric pattern 254and the third threshold voltage control pattern 294.

Referring to FIG. 19, the second gate structure 284 may further includea second dipole layer 314 having dipoles at an interface between thesecond interface pattern 244 and the second high-k dielectric pattern254 such that an upper surface of the second dipole layer 314 is incontact with a lower surface of the second high-k dielectric pattern 254and a lower surface of the second dipole layer 314 is in contact with anupper surface of the second interface pattern 244.

In example embodiments, the second dipole layer 314 may include aluminumoxide dipoles, and the second threshold voltage of the second transistormay move in a positive direction. Thus, in an NMOS transistor, even ifthe second threshold voltage control pattern 264 includes thesubstantially the same material composition as that of the firstthreshold voltage control pattern 262, e.g., titanium nitride, thesecond threshold voltage control pattern 264 may have the fifththickness T5 less than the fourth thickness T4 of the first thresholdvoltage control pattern 262, and the relatively high second thresholdvoltage may be obtained.

For example, the second dipole layer 314 may be formed by forming andthermally treating a layer including aluminum oxide on the second high-kdielectric pattern 254, so that dipoles of aluminum oxide in the layermay move into the interface between the second interface pattern 244 andthe second high-k dielectric pattern 254.

Referring to FIG. 20, the first gate structure 282 may further include afirst dipole layer 312 having dipoles at an interface between the firstinterface pattern 242 and the first high-k dielectric pattern 252 suchthat an upper surface of the first dipole layer 312 is in contact with alower surface of the first high-k dielectric pattern 252 and a lowersurface of the first dipole layer 312 is in contact with an uppersurface of the first interface pattern 242.

When an element is referred to as “contacting” or “in contact with”another element, there are no intervening elements present.

In example embodiments, the first dipole layer 312 may include lanthanumoxide dipoles, and the first threshold voltage of the first transistormay move in a negative direction. Thus, the fourth thickness T4 of thefirst threshold voltage control pattern 262 in FIG. 20 may be more thanthe fourth thickness T4 of the first threshold voltage control pattern262 in FIG. 3B.

FIGS. 21, 22, 23A and 23B are a plan view and cross-sectional viewsillustrating a fifth semiconductor device in accordance with exampleembodiments. Particularly, FIG. 21 is a plan view, FIG. 22 is across-sectional view taken along a line D-D′ of FIG. 21, FIG. 23A is across-sectional view taken along lines E-E′, F-F′ and G-G′ of FIG. 21,and FIG. 23B is an enlarged cross-sectional view of regions U, V and Wof FIG. 23A.

Referring to FIGS. 21, 22, 23A and 23B, the fifth semiconductor devicemay include third to fifth semiconductor patterns 422, 424 and 426,third to fifth epitaxial layers 512, 514 and 516, and third to fifthgate structures 582, 584 and 586 on a substrate 400. The fifthsemiconductor device may further include third to fifth active fins 402,404 and 406, an isolation pattern 430, third to fifth gate spacers 482,484 and 486, an inner spacer 500, and an insulation layer 520.

The substrate 400 may include third to fifth regions III, IV and V. Arelatively low voltage, a middle voltage, and a relatively high voltagemay be applied to the third to fifth regions III, IV and V,respectively.

In example embodiments, the third to fifth semiconductor patterns 422,424 and 426 may serve as channels of third to fifth transistors,respectively. Each of the third to fifth epitaxial layers 512, 514 and516 may serve as a source/drain layer of an NMOS transistor or a PMOStransistor.

The third to fifth gate structures 582, 584 and 586 may be formed on thethird to fifth regions III, IV and V, respectively, of the substrate400, and may surround the third to fifth semiconductor patterns 422, 424and 426, respectively.

The third gate structure 582 may include a third gate insulationpattern, a fourth threshold voltage control pattern 562, and a thirdworkfunction metal pattern 572 sequentially stacked from a surface ofeach of the third semiconductor patterns 422, and the third gateinsulation pattern may include a third interface pattern 542 and a thirdhigh-k dielectric pattern 552 sequentially stacked. The third gatestructure 582 together with the third epitaxial layer 512 and the thirdsemiconductor pattern 422 may form the third transistor.

The fourth gate structure 584 may include a fourth gate insulationpattern, a fifth threshold voltage control pattern 564, and a fourthworkfunction metal pattern 574 sequentially stacked from a surface ofeach of the fourth semiconductor patterns 424, and the fourth gateinsulation pattern may include a fourth interface pattern 544 and afourth high-k dielectric pattern 554 sequentially stacked. The fourthgate structure 584 together with the fourth epitaxial layer 514 and thefourth semiconductor pattern 424 may form the fourth transistor.

The fifth gate structure 586 may include a fifth gate insulationpattern, a sixth threshold voltage control pattern 566, and a fifthworkfunction metal pattern 576 sequentially stacked from a surface ofeach of the fifth semiconductor patterns 426, and the fifth gateinsulation pattern may include a fifth interface pattern 546 and a fifthhigh-k dielectric pattern 556 sequentially stacked. The fifth gatestructure 586 together with the fifth epitaxial layer 516 and the fifthsemiconductor pattern 426 may form the fifth transistor.

In example embodiments, each of the third to fifth transistors may be anNMOS transistor, and third to fifth threshold voltages of the respectivethird to fifth transistors on the respective third to fifth regions III,IV and V may increase in this order. For example, the fifth thresholdvoltage may be greater than the fourth threshold voltage, and the fourththreshold voltage may be greater than the third threshold voltage.Additionally, third to fifth workfunctions of the respective third tofifth gate structures 582, 584 and 586 may increase in this order. Forexample, the fifth workfunction of the fifth gate structure 586 may begreater than the fourth workfunction of fourth gate structure 584, andthe fourth workfunction of fourth gate structure 584 may be greater thanthe third workfunction of third gate structure 582.

In example embodiments, the fourth and fifth threshold voltage controlpatterns 562 and 564 may include substantially the same materialcomposition, e.g., titanium nitride, and as the fourth threshold voltageis greater than the third threshold voltage, a twelfth thickness T12 ofthe fifth threshold voltage control pattern 564 may be greater than aneleventh thickness T11 of the fourth threshold voltage control pattern562. The sixth threshold voltage control pattern 566 may include adifferent material composition from that of the fourth and fifththreshold voltage control patterns 562 and 564, e.g., titanium siliconnitride, and thus the fifth threshold voltage may be greater than thefourth threshold voltage, however, a thirteenth thickness T13 of thesixth threshold voltage control pattern 566 may be equal to or less thanthe twelfth thickness T12 of the fifth threshold voltage control pattern564.

A ninth thickness T9 in the vertical direction of a portion of thefourth workfunction metal pattern 574 of the fourth transistor betweenthe fourth semiconductor patterns 424 may be equal to or less than aneighth thickness T8 in the vertical direction of a portion of thirdworkfunction metal pattern 572 of the third transistor between the thirdsemiconductor patterns 422. Also, the ninth thickness T9 in the verticaldirection of a portion of the fourth workfunction metal pattern 574 ofthe fourth transistor between the fourth semiconductor patterns 424 maybe equal to or less than a tenth thickness T10 in the vertical directionof a portion of fifth workfunction metal pattern 576 of the fifthtransistor between the fifth semiconductor patterns 426.

Additionally, the ninth thickness T9 in the vertical direction of theportion of the fourth workfunction metal pattern 574 of the fourthtransistor between the fourth semiconductor patterns 424 may be lessthan twice a seventh thickness T7 in the horizontal direction of aportion of the fourth workfunction metal pattern 574 stacked from asidewall of the fifth threshold voltage control pattern 564 in thesecond direction.

FIG. 24 is a cross-sectional view illustrating a sixth semiconductordevice in accordance with example embodiments. Particularly, FIG. 24 isan enlarged cross-sectional view of regions U, V and W of FIG. 24. Thesixth semiconductor device may be substantially the same as or similarto the fifth semiconductor device, except for the gate structure.

Referring to FIG. 24, the fifth gate structure 586 of the fifthtransistor may further include a third dipole layer 616 having dipolesat an interface between the fifth interface pattern 546 and the fifthhigh-k dielectric pattern 556 such that an upper surface of the thirddipole layer 616 is in contact with a lower surface of the fifth high-kdielectric pattern 556 and a lower surface of the third dipole layer 616is in contact with an upper surface of the fifth interface pattern 546.

In example embodiments, the third dipole layer 616 may include aluminumoxide dipoles, and the fifth threshold voltage of the fifth transistormay move in a positive direction. Thus, in an NMOS transistor, even ifthe sixth threshold voltage control pattern 566 includes substantiallythe same material composition as that of the fifth threshold voltagecontrol pattern 564, e.g., titanium nitride, the sixth threshold voltagecontrol pattern 566 may have a thirteenth thickness T13 less than thetwelfth thickness T12 of the fifth threshold voltage control pattern564, and the relatively higher fifth threshold voltage may be obtainedcompared to the fourth threshold voltage.

FIGS. 25, 26, 27A and 27B are a plan view and cross-sectional viewsillustrating an eighth semiconductor device in accordance with exampleembodiments. Particularly, FIG. 25 is a plan view, FIG. 26 is across-sectional view taken along lines D-D′ and H-H′ of FIG. 25, FIG.27A is a cross-sectional view taken along lines I-I′, J-J′ and K-K′ ofFIG. 25, and FIG. 27B is an enlarged cross-sectional view of regions U,V, W, R, S and T of FIG. 27A.

The eighth semiconductor device may further include a seventhsemiconductor device on sixth to eighth regions VI, VII and VIII of thesubstrate 400 in addition to the sixth semiconductor on the third tofifth regions III, IV and V of the substrate 400. Thus, only the seventhsemiconductor device will be described.

In example embodiments, the third to fifth regions III, IV and V of thesubstrate 400 may be NMOS regions, and the sixth to eighth regions VI,VII and VIII of the substrate 400 may be PMOS regions. For example, thesixth and seventh semiconductor devices may include NMOS transistors andPMOS transistors, respectively.

Referring to FIGS. 25, 26, 27A and 27B, the seventh semiconductor devicemay include sixth to eighth semiconductor patterns 722, 724 and 726,sixth to eighth epitaxial layers 812, 814 and 816, and sixth to eighthgate structures 882, 884 and 886 on the substrate 400. The seventhsemiconductor device may further include sixth to eighth active fins403, 405 and 407, the isolation pattern 430, sixth to eighth gatespacers 782, 784 and 786, an inner spacer 800, and the insulation layer520.

The sixth to eighth gate structures 882, 884 and 886 may be formed onthe sixth to eighth regions VI, VII and VIII, respectively, of thesubstrate 400, and may surround sixth to eighth semiconductor patterns722, 724 and 726, respectively.

The sixth gate structure 882 may include a sixth gate insulationpattern, a seventh threshold voltage control pattern 862, and an eighththreshold voltage control pattern 872 sequentially stacked from asurface of each of the sixth semiconductor patterns 722, and the sixthgate insulation pattern may include a sixth interface pattern 842 and asixth high-k dielectric pattern 852 sequentially stacked. The sixth gatestructure 882 together with the sixth epitaxial layer 812 and the sixthsemiconductor pattern 722 may form a sixth transistor.

The seventh gate structure 884 may include a seventh gate insulationpattern and a ninth threshold voltage control pattern 864 sequentiallystacked from a surface of each of the seventh semiconductor patterns724, and the seventh gate insulation pattern may include a seventhinterface pattern 844 and a seventh high-k dielectric pattern 854sequentially stacked, and a fourth dipole layer 914 at an interfacetherebetween. The seventh gate structure 884 together with the seventhepitaxial layer 814 and the seventh semiconductor pattern 724 may form aseventh transistor.

The eighth gate structure 886 may include an eighth gate insulationpattern and a tenth threshold voltage control pattern 866, and theeighth gate insulation pattern may include an eighth interface pattern846 and an eighth high-k dielectric pattern 856 sequentially stacked.The eighth gate structure 886 together with the eighth epitaxial layer816 and the eighth semiconductor pattern 726 may form an eighthtransistor.

In example embodiments, all of sixth to eighth threshold voltages of therespective sixth to eighth transistors on the respective sixth to eighthregions VI, VII and VIII may have negative values, and absolute valuesof the sixth to eighth threshold voltages may decrease in this order.For example, the absolute value of the sixth threshold voltage may begreater than the absolute value of the seventh threshold voltage, andthe absolute value of the seventh threshold voltage may be greater thanthe absolute value of the eighth threshold voltage.

In example embodiments, the ninth and tenth threshold voltage controlpatterns 864 and 866 may include substantially the same material, e.g.,titanium nitride, and may have substantially the same thickness.However, as the fourth dipole layer 914 includes, e.g., lanthanum oxidedipoles, the seventh threshold voltage of the seventh transistor maymove in a negative direction, and thus the absolute value of the sevenththreshold voltage of the seventh transistor may be greater than theabsolute value of the eighth threshold voltage of the eighth transistor.

The sixth transistor may include the seventh and eighth thresholdvoltage control patterns 862 and 872 sequentially stacked, and theseventh and eighth threshold voltage control patterns 862 and 872 mayinclude, e.g., titanium silicon nitride and titanium nitride,respectively. As the sixth transistor has the seventh threshold voltagecontrol pattern 862 including titanium silicon nitride having gooddiffusion prevention characteristics for a workfunction metal, the sixththreshold voltage of which an absolute value is high may be obtained.

In the figures, according to exemplary embodiments, the sixth to eighthtransistors are shown to include no workfunction metal patterns,however, the inventive concepts may not be limited thereto. Thus, insome embodiments, the sixth to eighth transistors may includeworkfunction metal patterns, respectively, according to the distancesbetween channels.

The foregoing is illustrative of example embodiments and is not to beconstrued as limiting thereof. Although a few example embodiments havebeen described, those skilled in the art will readily appreciate thatmany modifications are possible in the example embodiments withoutmaterially departing from the novel teachings and advantages of thepresent inventive concept. Accordingly, all such modifications areintended to be included within the scope of the present inventiveconcept. In the claims, means-plus-function clauses are intended tocover the structures described herein as performing the recited functionand not only structural equivalents but also equivalent structures.Therefore, it is to be understood that the foregoing is illustrative ofvarious example embodiments and is not to be construed as limited to thespecific example embodiments disclosed, and that modifications to thedisclosed example embodiments, as well as other example embodiments, areintended to be included within the scope of the appended claims.

1.-20. (canceled)
 21. A semiconductor device, comprising: first channelson a substrate, the first channels being spaced apart from each other ina vertical direction on an upper surface of the substrate; a first gatestructure surrounding the first channels and including a first gateinsulation pattern, a first threshold voltage control pattern, and afirst workfunction metal pattern sequentially stacked from a surface ofeach of the first channels; second channels on the substrate, the secondchannels being spaced apart from each other in the vertical direction onthe upper surface of the substrate and being spaced apart from the firstchannels in a horizontal direction parallel to the upper surface of thesubstrate; and a second gate structure surrounding the second channelsand including a second gate insulation pattern, a second thresholdvoltage control pattern, and a second workfunction metal patternsequentially stacked from a surface of each of the second channels,wherein a second workfunction of the second gate structure is greaterthan a first workfunction of the first gate structure, and a thicknessof the second threshold voltage control pattern is equal to or less thana thickness of the first threshold voltage control pattern.
 22. Thesemiconductor device of claim 21, wherein the first threshold voltagecontrol pattern has a material composition different from a materialcomposition of the second threshold voltage control pattern.
 23. Thesemiconductor device of claim 21, wherein each of the first and secondthreshold voltage control patterns includes at least one of titaniumnitride, titanium oxynitride, titanium oxycarbonitride, titanium siliconnitride, titanium silicon oxynitride, titanium aluminum oxynitride,tantalum nitride, tantalum oxynitride, tantalum aluminum nitride,tantalum aluminum oxynitride, tungsten nitride, tungsten carbonitride,and aluminum oxide.
 24. The semiconductor device of claim 23, whereinthe first threshold voltage control pattern includes titanium nitride,and the second threshold voltage control pattern includes titaniumsilicon nitride.
 25. The semiconductor device of claim 23, wherein thefirst threshold voltage control pattern has a single layer, and thesecond threshold voltage control pattern includes a double-layeredstructure.
 26. The semiconductor device of claim 25, wherein the firstthreshold voltage control pattern includes a titanium nitride layer, andthe second threshold voltage control pattern includes a titanium nitridelayer and a titanium silicon nitride layer sequentially stacked.
 27. Thesemiconductor device of claim 21, wherein the first gate insulationpattern includes a first interface pattern and a first high-k dielectricpattern sequentially stacked, and the second gate insulation patternincludes a second interface pattern and a second high-k dielectricpattern sequentially stacked.
 28. The semiconductor device of claim 27,wherein the second gate insulation pattern further includes a dipolelayer at an interface between the second interface pattern and thesecond high-k dielectric pattern, the dipole layer including aluminumoxide dipoles.
 29. The semiconductor device of claim 28, wherein thefirst and second threshold voltage control patterns have the samematerial composition.
 30. The semiconductor device of claim 29, whereineach of the first and second threshold voltage control patterns includesa titanium nitride layer.
 31. The semiconductor device of claim 27,further comprising a dipole layer at an interface between the firstinterface pattern and the first high-k dielectric pattern, the dipolelayer including lanthanum oxide dipoles.
 32. A semiconductor device,comprising: first channels on a substrate, the first channels beingspaced apart from each other in a vertical direction on an upper surfaceof the substrate; a first gate structure surrounding the first channelsand including a first gate insulation pattern, a first threshold voltagecontrol pattern, and a first workfunction metal pattern sequentiallystacked from a surface of each of the first channels; second channels onthe substrate, the second channels being spaced apart from each other inthe vertical direction on the upper surface of the substrate and beingspaced apart from the first channels in a horizontal direction parallelto the upper surface of the substrate; and a second gate structuresurrounding the second channels and including a second gate insulationpattern, a second threshold voltage control pattern, and a secondworkfunction metal pattern sequentially stacked from a surface of eachof the second channels, wherein a second workfunction of the second gatestructure is greater than a first workfunction of the first gatestructure, and a thickness in the vertical direction of a portion of thefirst work metal pattern between the first channels is equal to or lessthan a thickness in the vertical direction of a portion of the secondworkfunction metal pattern between the second channels.
 33. Thesemiconductor device of claim 32, wherein the first and secondworkfunction metal patterns have the same material composition, and thefirst and second threshold voltage control patterns have differentmaterial compositions from each other.
 34. The semiconductor device ofclaim 33, wherein the first threshold voltage control pattern includestitanium nitride, and the second threshold voltage control patternincludes titanium silicon nitride.
 35. The semiconductor device of claim33, wherein the first threshold voltage control pattern has a singlelayer, and the second threshold voltage control pattern includes adouble-layered structure.
 36. The semiconductor device of claim 35,wherein the first threshold voltage control pattern includes a titaniumnitride layer, and the second threshold voltage control pattern includesa titanium nitride layer and a titanium silicon nitride layersequentially stacked.
 37. A semiconductor device, comprising: firstchannels on a substrate, the first channels being spaced apart from eachother in a vertical direction on an upper surface of the substrate;first source/drain layers on the substrate, the first source/drainlayers being connected to respective opposite sidewalls of the firstchannels; and a first gate structure surrounding the first channels andincluding a first gate insulation pattern, a first threshold voltagecontrol pattern, and a first workfunction metal pattern sequentiallystacked from a surface of each of the first channels, wherein athickness in the vertical direction of a portion of the first work metalpattern between the first channels is less than a thickness in ahorizontal direction of a portion of the first workfunction metalpattern stacked from a sidewall of the first threshold voltage controlpattern, the horizontal direction being parallel to the upper surface ofthe substrate.
 38. The semiconductor device of claim 37, wherein thefirst channels, the first source/drain layers, and the first gatestructure define a first transistor, wherein the semiconductor devicefurther comprises a second transistor including: second channels on thesubstrate, the second channels being spaced apart from each other in thevertical direction on the upper surface of the substrate and beingspaced apart from the first channels in the horizontal direction; secondsource/drain layers on the substrate, the second source/drain layersbeing connected to respective opposite sidewalls of the second channels;and a second gate structure surrounding the second channels andincluding a second gate insulation pattern, a second threshold voltagecontrol pattern, and a second workfunction metal pattern sequentiallystacked from a surface of each of the second channels, and wherein asecond workfunction of the second gate structure is greater than a firstworkfunction of the first gate structure.
 39. The semiconductor deviceof claim 38, wherein the first transistor has a first threshold voltageand the second transistor has a second threshold voltage greater thanthe first threshold voltage, and wherein a thickness in the verticaldirection of a portion of the second work metal pattern between thesecond channels is not less than a thickness in the horizontal directionof a portion of the second workfunction metal pattern stacked from asidewall of the second threshold voltage control pattern.
 40. Thesemiconductor device of claim 38, wherein the first and secondworkfunction metal patterns have the same material composition, and thefirst and second threshold voltage control patterns have differentmaterial compositions from each other.